生物学杂志

生物学杂志 ›› 2025, Vol. 42 ›› Issue (3): 1-.doi: 10.3969/j.issn.2095-1736.2025.03.001

• 研究报告 •    下一篇

低温等离子体调节H3K4me2刺激灵芝生长和灵芝酸积累

张　莹1,2， 黄　青1,2   

  1. 1. 中国科学院合肥物质科学研究院， 合肥 230031；
    2. 中国科学技术大学 研究生院科学岛分院， 合肥 230036
  • 出版日期:2025-06-18 发布日期:2025-06-16
  • 通讯作者: 黄青，博士，研究员，研究方向为生物物理学，E-mail:huangq@ipp.ac.cn
  • 作者简介:张莹，硕士，研究方向为生物物理学，E-mail:zy990214@mail.ustc.edu.cn
  • 基金资助:
    国家自然科学基金重点项目（11635013）

Nanosecond pulsed surface dielectric barrier discharge plasma stimulates the growth of Ganoderma lucidum and the accumulation of ganoderic acids by regulating H3K4me2

ZHANG Ying1,2, HUANG Qing1,2   

  1. 1. Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
    2. Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China
  • Online:2025-06-18 Published:2025-06-16

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摘要： 研究从表观遗传学角度探讨纳秒脉冲介质阻挡放电等离子体（NS-DBD）刺激灵芝生长和灵芝酸生物合成机制。通过高效液相色谱法检测发现，NS-DBD可以促进灵芝酸的生物合成。生化指标检测发现，NS-DBD诱导了灵芝胞内活性氧的积累，使总超氧化物歧化酶、过氧化氢酶、谷胱甘肽还原酶等抗氧化酶的活性升高。同时伴有灵芝酸生物合成相关基因转录水平的上调。免疫荧光和染色质免疫沉淀测序方法证实，NS-DBD处理后，灵芝酸合成通路上的基因hmgr、pmvk、mvd、sqs和ls的H3K4me2修饰水平都发生了显著变化。其中，基因hmgr、pmvk、mvd和ls的H3K4me2修饰主要分布于基因的外显子区域，而基因sqs的H3K4me2修饰则分布于上游2 kb和外显子区域。研究表明，NS-DBD通过刺激ROS积累调节灵芝酸合成通路上一些关键基因的H3K4me2修饰水平，进而调节灵芝的生长和灵芝酸的合成。

关键词: 低温等离子体, 介质阻挡放电（DBD）, 灵芝, 灵芝酸, 刺激效应, H3K4me2

Abstract: The mechanism of nanosecond pulse dielectric barrier discharge plasma (NS-DBD) promoting the growth ofGanoderma lucidumand the biosynthesis of ganoderic acids from the perspective of epigenetics was explored. Through high-performance liquid chromatography detection, it was found that NS-DBD can promote the biosynthesis of ganoderic acids. Through biochemical indicators detection, it was found that NS-DBD induced the accumulation of intracellular reactive oxygen species inG. lucidum, leading to an increase in the activity of antioxidant enzymes such as total superoxide dismutase, catalase, and glutathione reductase. Simultaneously, there was an increase in the expression of genes related to the biosynthesis of ganoderic acids. Through immunofluorescence and chromatin immunoprecipitation sequencing methods, it was confirmed that there were significant changes in the H3K4me2 modification levels of geneshmgr, pmvk, mvd, sqs, andlsin the ganoderic acids synthesis pathway after NS-DBD treatment. The H3K4me2 modifications of geneshmgr, pmvk, mvd, andlswere mainly distributed in the exon regions of the genes, while the H3K4me2 modifications of genesqswere distributed in the upstream 2 kb and exon regions. Therefore, this study suggested that NS-DBD regulates the H3K4me2 modification levels of some key genes in the ganoderic acids synthesis pathway by stimulating ROS accumulation, thereby regulating the growth ofG. lucidumand the synthesis of ganoderic acids.

Key words: low-temperature plasma, dielectric barrier discharge (DBD);Ganoderma lucidum, ganoderic acids, stimulation effect, H3K4me2

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